| 摘要 |
PURPOSE: A method for etching a contact of a semiconductor device is provided to form an ultra-fine contact hole by minimizing a difference of etch rate, a CD(critical dimension) bias(b-a) and an etching profile between the center of a wafer and the edge of the wafer. CONSTITUTION: An interlayer dielectric(24) is formed on a semiconductor substrate(21) having a gate electrode. A contact etch mask is formed on the interlayer dielectric. A contact etch process is performed on the interlayer dielectric by using etching gas having a gas flowrate of 300-500 sccm(standard cubic centimeters per minute) and a pumping quantity of 2500-4000 L/S.
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