| 摘要 |
PURPOSE: To provide a semiconductor device which has a silicide film on a gate electrode or a source/drain layer to make a density higher in comparison with conventional arts, and to provide a manufacturing method thereof. CONSTITUTION: On a semiconductor wafer 30 whereon a gate electrode 32 and an LDD layer 33 are formed, an SiN film 34 to become a silicide block is formed. On the SiN film 34, an opening 34a communicated to the LDD layer 33 is provided. An impurity is led into the LDD layer 33 via the opening 34a to form a source/drain layer 33a, and a surface thereof is silicified to form a silicide film 36a. Next, a layer insulating film 37 composed of SiO2 is formed, and the layer insulating film 37 is etched on the condition that an etching rate of SiO2 is higher in comparison with SiN to form a contact hole 37h from an upper surface of the layer insulating film 37 through the opening 34a to the LDD layer 33. |
