发明名称 |
Gate etch process |
摘要 |
A method of making a semiconductor structure includes etching an anti-reflective coating layer at a pressure of 10 millitorr or less; etching a nitride layer with a first nitride etch plasma having a first F:C ratio; and etching the nitride layer with a second nitride etch plasma having a second F:C ratio. The first F:C ratio is greater than the second F:C ratio.
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申请公布号 |
US6699795(B1) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020099841 |
申请日期 |
2002.03.15 |
申请人 |
CYPRESS SEMICONDUCTOR CORP. |
发明人 |
SCHWARZ BENJAMIN;YANG CHAN-LON;IKEUCHI KIYOKO;KESWICK PETER;LEE LIEN |
分类号 |
H01L21/311;H01L21/3213;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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