发明名称 Defect source identifier
摘要 A method and associated apparatus of analyzing defects on semiconductor wafers. The method includes identifying defects on the semiconductor wafer. Defect inspection information is created within a defect source identifier client. The defect inspection information containing information regarding the identified defects. The defect inspection information is transmitted through a network to a defect source identifier server. Defect source information is derived at the defect source identifier server in response to the defect inspection information. The defect source information is transmitted from the defect source identifier server to the defect source identifier client. The defect source information is utilized at the defect source identifier client. In one aspect, the utilizing the defect solution information involves displaying defect solutions to the defect at the defect source identifier client in response to the defect solution information. In another aspect, utilizing the defect solution information involves altering the operation of the wafer processing system.
申请公布号 US6701259(B2) 申请公布日期 2004.03.02
申请号 US20010905607 申请日期 2001.07.13
申请人 APPLIED MATERIALS, INC. 发明人 DOR AMOS;RADZINSKI MAYA
分类号 H01L21/66;(IPC1-7):G01N21/95 主分类号 H01L21/66
代理机构 代理人
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