Vertical semiconductor device having alternating conductivity semiconductor regions

摘要

There is provided a method of manufacturing a vertical semiconductor device including a structural section in which an n<->-type semiconductor region and a p<->-type semiconductor region are arranged alternately without filling trenches by epitaxial growth. A p<->-type silicon layer (13) which becomes a p<->-type semiconductor region (12) is formed. An n<->-type semiconductor region (11) is formed by diffusing n-type impurities into the p<->-type silicon layer (13) through the sidewalls of first trenches (22) formed in the p<->-type silicon layer (13).