发明名称 |
Selective silicide blocking |
摘要 |
A selectively silicided semiconductor structure and a method for fabricating same is disclosed herein. The semiconductor structure has suicide present on the polysilicon line between the N+ diffusion or N+ active area and the P+ diffusion or active area at the N+/P+ junction of the polysilicon line, and silicide is not present on the N+ active area and the P+ active area. The presence of this selective silicidation creates a beneficial low-resistance connection between the N+ region of the polysilicon line and the P+ region of the polysilicon line. The absence of silicidation on the N+ and P+ active areas, specifically on the PFET and NFET structures, prevents current leakage associated with the silicidation of devices.
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申请公布号 |
US6700163(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20010683278 |
申请日期 |
2001.12.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BREITWISCH MATTHEW J.;BROWN JEFFREY S.;HOOK TERENCE B.;MANN RANDY W.;PUTNAM CHRISTOPHER S.;YOUNUS MOHAMMAD I. |
分类号 |
H01L21/8238;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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