DUAL-GATE STRUCTURE AND METHOD OF FABRICATING INTEGRATED CIRCUITS HAVING DUAL-GATE STRUCTURES

摘要

PURPOSE: A method of fabricating a dual-gate on a substrate and an integrated circuit having a dual-gate structure are provided to easily form the dual gate with clean surface and good hardness by using a first dielectric layer as an etch stop layer. CONSTITUTION: A first high-K dielectric layer(14A,14B) is formed in a first area(10A) defined for a first gate structure and in a second area(10B) defined for a second gate structure. A second high-K dielectric layer(16A) is formed in the first and second areas. The first high-K dielectric layer has a lower etch rate to an etchant relative to the second high-K dielectric layer. The second high-K dielectric layer(16A) is etched from the second area to the first high-K dielectric layer with the etchant. A gate conductive layer is formed in the first and second areas(10A,10B) over the second high-K dielectric layer and first high-K dielectric layer, respectively.