发明名称 VERTICAL TYPE FURNACE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PURPOSE: A vertical type furnace and a method for manufacturing a semiconductor device using the same are provided to improve the uniformity of wafers by uniformly flowing process gas into a process tube. CONSTITUTION: A vertical type furnace is provided with a vertical type process tube(10) for carrying out predetermined semiconductor processes, a wafer boat(40) installed at the inner portion of the process tube for loading wafers, and a manifold(50). At this time, the manifold includes a body part for supporting the lower portion of the process tube, a hole formed at the center portion of the body part for passing the wafer boat, a plurality of gas jet ports formed at the inner peripheral portion of the body part for supplying process gas into the process tube, and a gas inlet port formed at the outer peripheral portion of the body part for being connected through the gas jet ports.
申请公布号 KR20040017899(A) 申请公布日期 2004.03.02
申请号 KR20020049829 申请日期 2002.08.22
申请人 DONGBU ELECTRONICS CO., LTD. 发明人 KIM, TAE HWAN
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
代理机构 代理人
主权项
地址