Insulated gate semiconductor device

摘要

An insulated gate semiconductor device includes a first semiconductor layer of a first conductivity type. A plurality of second semiconductor layers of a second conductivity type selectively formed in a surface area of the first semiconductor layer. At least one third semiconductor layer of the first conductivity type is formed in a surface area of each of the second semiconductor layers. A fourth semiconductor layer is formed on a bottom of the first semiconductor layer. At least one fifth semiconductor layer of the second conductivity type is provided in the first semiconductor layer and connected to at least one of the plurality of second semiconductor layers. The fifth semiconductor layer has impurity concentration that is lower than that of the second semiconductor layers.