| 发明名称 |
Capacitor and memory structure and method |
| 摘要 |
A rugged polysilicon electrode for a capacitor has high surface area enhancement with a thin layer by high nucleation density plus gas phase doping which also enhances grain shape and oxygen-free dielectric formation.
|
| 申请公布号 |
US6699745(B1) |
申请公布日期 |
2004.03.02 |
| 申请号 |
US19980049591 |
申请日期 |
1998.03.27 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BANERJEE ADITI;WISE RICK L.;CRENSHAW DARIUS L. |
| 分类号 |
H01L21/02;H01L21/8242;H01L27/108;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
