| 摘要 |
A method of fabricating a contact-less array of non-volatile memory cells includes: (A) forming over the substrate three stacks S1, S2 and S3 of first and second polysilicon layers; (B) forming in the substrate a drain region between the stacks S1 and S2, self-aligned to the edges of stacks S1 and S2, (C) forming side-wall spacers adjacent to edges of each polysilicon stack, (D) forming in the substrate a source region between stacks S2 and S3, self-aligned to the side-wall spacers; (E) forming a composite layer of HTO-Nitride-Polysilicon (ONP) over the array of memory cells immediately after step (B); (F) converting the ONP composite layer to ONO composite layer after step (D); (G) anisotropically etching the ONO composite layer to form ONO side-wall spacers adjacent to edges of the polysilicon stacks; and (H) growing select gate oxide over the row of polysilicon.
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