| 摘要 |
PURPOSE: A semiconductor device having a bit line by a damascene process and a manufacturing method thereof are provided to be capable of preventing the bridge phenomenon between bit lines due to tungsten residues and restraining the short phenomenon between a buried contact poly layer and the bit line. CONSTITUTION: A semiconductor device is provided with a semiconductor substrate having an active and inactive region(100,100-1), gates, a gate spacer formed at both sidewalls of each gate, pad contacts(230) formed on the first insulating layer(180), and the second and third insulating layer(240,270-1) sequentially formed at the upper portion of the resultant structure. The semiconductor device further includes bit lines(320-1), grooves having a larger width than that of the bit line, the second nitride layer(350-1) for covering the bit line, the fourth insulating layer(420) and the third nitride layer(440) sequentially formed at the upper portion of the resultant structure, and buried contact poly layers(460) formed at the predetermined upper portions of the resultant structure.
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