METHOD FOR FORMING METAL PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal pattern of a semiconductor device is provided to be capable of stably forming an upper pattern on a lower via part. CONSTITUTION: The first insulating layer(120) is formed at the upper portion of a semiconductor substrate(100). The first via holes are formed by carrying out a photo etching process at the first insulating layer using the first photo mask. The first via parts(130a,130b) are formed by filling the first metal at the first via holes. An etch stop layer(140) and the second insulating layer(150) are sequentially formed at the upper portion of the resultant structure. The second via holes are then formed for exposing the upper surfaces of the first via parts. A metal layer is formed at the upper portion of the resultant structure for filling the second via holes. A metal pattern is then formed by selectively patterning the metal layer.