| 摘要 |
The present invention provides a photovoltaic device comprising an electricity generating layer including at least one p/n type junction, the layer comprising a silicon-based non-single-crystalline semiconductor material, wherein a nitrogen concentration has a maximum peak at the junction interface of the p/n type junction, and the nitrogen concentration at the maximum peak is within a range from 1x10<18 >atom/cm<3 >to 1x10<20 >atom/cm<3>, thereby providing a photovoltaic device of high photoelectric conversion efficiency and high reliability.
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