发明名称 |
Thin film sensor, method of manufacturing thin film sensor, and flow sensor |
摘要 |
A flow sensor includes a substrate in which a cavity is formed. A thin film structure is located above the cavity. The thin film structure includes a patterned multilayer film. A dummy film layer is formed or a number of dummy film layers are formed in close proximity to the patterned multilayer film to protect the multilayer film from the effect of reduction gas.
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申请公布号 |
US6698283(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020195564 |
申请日期 |
2002.07.16 |
申请人 |
DENSO CORPORATION |
发明人 |
WADO HIROYUKI;IWAKI TAKAO |
分类号 |
G01F1/692;G01F1/684;H01C7/02;(IPC1-7):G01F1/68 |
主分类号 |
G01F1/692 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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