发明名称 Thin film sensor, method of manufacturing thin film sensor, and flow sensor
摘要 A flow sensor includes a substrate in which a cavity is formed. A thin film structure is located above the cavity. The thin film structure includes a patterned multilayer film. A dummy film layer is formed or a number of dummy film layers are formed in close proximity to the patterned multilayer film to protect the multilayer film from the effect of reduction gas.
申请公布号 US6698283(B2) 申请公布日期 2004.03.02
申请号 US20020195564 申请日期 2002.07.16
申请人 DENSO CORPORATION 发明人 WADO HIROYUKI;IWAKI TAKAO
分类号 G01F1/692;G01F1/684;H01C7/02;(IPC1-7):G01F1/68 主分类号 G01F1/692
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