| 摘要 |
An upper electrode unit constituting the upper wall of a processing chamber of an etching device includes a first assembly that includes an upper electrode, a second assembly that supports the first assembly and a third assembly that includes power supply routes. After releasing a second locking mechanism and disengaging the third assembly alone with a removing mechanism, the first assembly is disengaged to perform maintenance on the upper electrode. After locking the second locking mechanism and releasing a first locking mechanism, the removing mechanism is utilized to disengage the second and third assemblies and, as a result, the processing chamber is opened to enable maintenance. By adopting the structure described above, a plasma processing device and a maintenance method thereof, that facilitate maintenance and reduce the workload imposed on the operator, are provided.
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