发明名称 |
Masking method for producing semiconductor components, particularly a BH laser diode |
摘要 |
A method produces structures for semiconductor components, particularly BH laser diodes, in which a mask material is applied to a sample in a masking step. The etch rate in an etching step depends upon the composition and/or nature of the mask material. The etch rate is selected in such a way so that the mask is at least partly dissolved during the etching step. It is therefore possible to easily remove the mask from the semiconductor material and apply additional layers in situ during the fabrication of semiconductor components.
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申请公布号 |
US6699778(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020052950 |
申请日期 |
2002.01.18 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
BORCHERT BERND;BAUMEISTER HORST;GESSNER ROLAND;VEUHOFF EBERHARD;WENGER GUNDOLF |
分类号 |
H01L21/033;H01L21/28;H01L21/302;H01L21/308;H01L21/3205;H01L21/461;H01S5/20;(IPC1-7):H01L21/28;H01L21/320 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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