发明名称 Thin film forming device, method of forming a thin, and self-light-emitting device
摘要 Measure of forming an EL layer by selectively depositing through evaporation a material for forming the EL layer at a desired location is provided. When a material for forming an EL layer is deposited, a mask (113) is provided between a sample boat (111) and a substrate (110). By applying voltage to the mask (113), the direction of progress of the material for forming the EL layer is controlled to be selectively deposited at a desired location.
申请公布号 US6699739(B2) 申请公布日期 2004.03.02
申请号 US20010798608 申请日期 2001.03.02
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;HIROKI MASAAKI;ISHIMARU NORIKO
分类号 H05B33/10;C23C14/04;H01L27/32;H01L51/00;H01L51/30;H01L51/40;(IPC1-7):H01L21/00;H01L21/84 主分类号 H05B33/10
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