发明名称 |
Method for growing layers of group III-nitride semiconductor having electrically passivated threading defects |
摘要 |
One method includes epitaxially growing a layer of group III-nitride semiconductor under growth conditions that cause a growth surface to be rough. The method also includes performing an epitaxial growth of a second layer of group III-nitride semiconductor on the first layer under growth conditions that cause the growth surface to become smooth. The two-step growth produces a lower density of threading defects.Another method includes epitaxially growing a layer of group III-nitride semiconductor on a lattice-mismatched crystalline substrate and then, chemically treating a growth surface of the layer to selectively electrically passivate defects that thread the layer.
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申请公布号 |
US6699760(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020179806 |
申请日期 |
2002.06.25 |
申请人 |
LUCENT TECHNOLOGIES, INC. |
发明人 |
HSU JULIA WAN-PING;MANFRA MICHAEL JAMES;WEIMANN NILS GUENTER |
分类号 |
C30B29/40;H01L21/20;H01L21/205;H01L21/316;H01L29/20;H01L29/737;H01L29/778;H01L29/78;(IPC1-7):H01L21/336 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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