Single chip pad oxide layer growth process

摘要

A single chip pad oxide layer growth process is disclosed. First, a silicon chip is sent into a reaction chamber, which is filled with hydrogen and oxygen. A rapid thermal process is employed to increase the temperature inside the chamber to about 850° C. to 1100° C. to grow a SiO2 layer. The error on the final temperature after the rapid thermal process can be controlled to fluctuate within one to two degrees.