发明名称 MOS-type semiconductor integrated circuit
摘要 An MOS-type semiconductor integrated circuit has two MOS transistors of the opposite conductivity channel types connected in series between a high-voltage potential terminal and a ground potential terminal. Those two MOS transistors constitute an inverter and their gates are connected together to an input node. As output nodes, first and second nodes are provided with a current path in between which includes transistors whose gates are connected to the high-voltage potential terminal. A current path including the first transistor which constitutes a switch is inserted between the first node and the output node, and a current path including the second transistor and a barrier transistor is inserted between the second node and the output node. The gates of the first and second transistors are respectively connected with complementary clock signals. The bate of the barrier transistor is connected to the high-voltage potential terminal.
申请公布号 US6700411(B2) 申请公布日期 2004.03.02
申请号 US20020234106 申请日期 2002.09.05
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 MATSUDERA KATSUKI;KOYANAGI MASARU
分类号 H03K17/10;H03K17/687;H03K17/693;H03K19/003;H03K19/0185;H03K19/0948;H03K19/096;(IPC1-7):H03K19/094 主分类号 H03K17/10
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