发明名称 |
Method for fabricating capacitor using electrochemical deposition and wet etching |
摘要 |
Provided is a method for fabricating a capacitor using an electrochemical deposition method and Ce(NH4)2(NO3)6 solution. The method includes the steps of: a) forming a contact hole in an insulation layer on a substrate; b) forming a plug including nitride in the contact hole; c) forming a Ru seed layer in the contact hole and on the insulation layer; d) forming a sacrificial layer including an open area overlapped with the contact hole on the Ru seed layer; e) forming a Ru layer for an electrode of the capacitor in the open area by performing electrochemical deposition; f) removing the sacrificial layer, whereby the Ru seed layer not covered with the Ru layer is exposed; and g) etching the exposed Ru seed layer by using an aqueous solution including Ce(NH4)2(NO3)6.
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申请公布号 |
US6699769(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020330353 |
申请日期 |
2002.12.30 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
SONG CHANG-ROCK;CHOI HYUNG-BOK |
分类号 |
H01L27/108;H01L21/02;H01L21/288;H01L21/3213;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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