发明名称 |
Nonvolatile ferroelectric memory device and method for driving the same |
摘要 |
A nonvolatile ferroelectric memory device includes a first cell array block and a second cell array block, each divided into an upper part and a lower part; sensing amplifiers arranged one by one on multiple bit lines at a middle portion between the first cell array block and the second cell array block; a data I/O encoder connected to end portions of the multiple bit lines for outputting multi-bit signals by encoding outputs of the sensing amplifiers; and a first reference cell array block and a second reference cell array block arranged between the first cell array block and the data I/O encoder and between the second cell array block and the data I/O encoder.
|
申请公布号 |
US6700812(B2) |
申请公布日期 |
2004.03.02 |
申请号 |
US20020251848 |
申请日期 |
2002.09.23 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KANG HEE BOK;KYE HUN WOO;LEE GEUN IL;PARK JE HOON;KIM JUNG HWAN |
分类号 |
G11C11/22;G11C11/56;H01L31/0328;(IPC1-7):G11C11/22 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|