Double-diffused MOS (DMOS) power transistor with a channel compensating implant

摘要

An improved DMOS power transistor (20) with a single p-body implant (12) and including an n-type channel compensating implant (NCCI) (24). The improved DMOS power transistor (20) provides a more favorable trade-off between threshold voltage (VT) and on-state resistance, while increasing the safe operating area (SOA). The NCCI (24) also improves the off-state breakdown voltage, and allows a larger fraction of the gate bias voltage to be supported on the thin gate oxide (32). The present invention can be fabricated using self-aligned fabrication techniques so that the channel length (22) is insensitive to lithography equipment.