| 摘要 |
A semiconductor device, enabling reliable electrical connection of a main electrode pad with an interconnection pattern without separate provision of a via use electrode pad in addition to the existing main electrode pad, provided with a silicon substrate (semiconductor substrate), an electronic element formation layer formed on one surface of that silicon substrate, an electrode pad electrically connected to the electronic element formation layer, a through hole passing through the electrode pad and the silicon substrate, an SiO2 film (insulating film), a via hole provided in the SiO2 film on the electrode pad along the opening rim of the through hole, and an interconnection pattern electrically leading out the electrode pad to the other surface of the silicon substrate through the through hole and via hole. |
