INTEGRATED CIRCUIT TRANSISTOR STRUCTURE AND FORMING METHOD OF CONDUCTOR ON THE INTEGRATED CIRCUIT TRANSISTOR STRUCTURE

摘要

PURPOSE: A method and structure for an integrated circuit transistor structure are provided to hold ambient gas and to decrease resistance of a gate conductor by using a gap between the gate conductor and a gate spacer. CONSTITUTION: An integrated circuit transistor structure includes a gate conductor that has a first conductive material(10) and a second conductive material(20). A non-deformable spacer(80A,80B) is formed at both sidewalls of the gate conductor. The integrated circuit transistor structure further includes a gap(95A,95B). The gap is formed between the gate conductor and the spacer. The first conductive material(10) is polysilicon and the second conductive material(20) is a metal or a polymer. The second conductive material(20) acts as a placeholder for the gap.