发明名称 Semiconductor diode construction
摘要 1,027,737. Lasers. NATIONAL RESEARCH DEVELOPMENT CORPORATION. May 14, 1964 [May 14, 1963], No. 19007/63. Heading H3B. [Also in Division H1] In a construction in which a semi-conductor diode is mounted between two end plates, a spacer, mounted between the end plates to hold them rigidly, is of a material of a coefficient of expansion similar to that of the diode. A semi-conductor diode 1, Fig. 2 (not shown), of gallium arsenide or phosphide, is mounted between two molybdenum plates 5, 6, the plate 5 being plated with gold and tin for contact with N-type region 2 and plate 6 being plated with gold and zinc for contact with P- type region 3. These plates serve as electrical contacts and are large enough to act as heat sinks. They are further held appropriately spaced by a member 7 of coefficient of expansion similar to that of the device 1 and, to ensure this similarity, the member 7 is preferably made from a semi-insulating form of the same material as the device 1. A sector of the spacer 7 is cut away to allow the passage of radiation emitted and, if desired, a second sector, opposite to the first, may be cut away to permit silvering of the rear face of the diode after the whole device has been assembled.
申请公布号 GB1027737(A) 申请公布日期 1966.04.27
申请号 GB19630019007 申请日期 1963.05.14
申请人 NATIONAL RESEARCH DEVELOPMENT CORPORATION 发明人 BROOM RONALD FRANCIS JOHNSTON;GOOCH COLIN HAROLD
分类号 H01L23/051;H01S5/02;H01S5/024 主分类号 H01L23/051
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