| 摘要 |
The present invention provides a semiconductor device and a method of manufacturing the same, the device being provided with a semiconductor circuit consisting of a semiconductor element that is capable of improving characteristics of a TFT and has uniform characteristics, the device and the method being provided by improving the interface between an active layer, in particular, a region for constructing a channel formation region and an insulating film. To attain the object above, according to the present invention, a gate wiring (102) is formed on a substrate (100) or a base film (101), a gate insulating film (103), an initial semiconductor film (104) and an insulating film (105) are formed and layered without exposing them to the air, the initial semiconductor film is then crystallized by irradiation with infrared light or ultraviolet light (laser light) through the insulating film (105), an active layer and a protective film having a desired shape are obtained by patterning, and a resist mask is used to complete manufacture of a semiconductor device provided with an LDD structure.
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