发明名称 LASER APPARATUS, LASER IRRADIATION METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, PRODUCTION SYSTEM FOR SEMICONDUCTOR DEVICE USING THE LASER APPARATUS, AND ELECTRONIC EQUIPMENT
摘要 Provided are a laser apparatus of continuous oscillation that is capable of enhancing the efficiency of substrate processing, a laser irradiation method, and a manufacturing method for a semiconductor device using the laser apparatus. A portion of a semiconductor film that should be left on a substrate after patterning is grasped in accordance with a mask. Then, a portion to be scanned with a laser light is determined so that it is possible to crystallize at least the portion to be obtained through the patterning. Also, a beam spot is made to strike the portion to be scanned. As a result, the semiconductor film is partially crystallized. That is, with the present invention, the laser light is not scanned and irradiated onto the entire surface of a semiconductor film but is scanned so that at least an indispensable portion is crystallized. With the construction described above, it becomes possible to save a time taken to irradiate the laser light onto a portion that will be removed through the patterning after the crystallization of the semiconductor film.
申请公布号 US6700096(B2) 申请公布日期 2004.03.02
申请号 US20020279960 申请日期 2002.10.25
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;OHTANI HISASHI;HIROKI MASAAKI;TANAKA KOICHIRO;SHIGA AIKO;AKIBA MAI
分类号 H01L21/20;B23K26/06;B23K26/08;G02F1/1368;G03F1/00;H01L21/268;H01L21/336;H01L21/77;H01L21/84;H01L29/786;H01S3/00;H01S5/06;(IPC1-7):B23K26/00 主分类号 H01L21/20
代理机构 代理人
主权项
地址