发明名称 |
Method for manufacturing Si-SiC member for semiconductor heat treatment |
摘要 |
A method for producing a Si-SiC member for heat treatment of semiconductor, which is suitable for heat treatment of a semiconductor wafer with a large diameter and capable of reducing the contamination of the semiconductor wafer as much as possible is provided. Further, a method for producing a Si-SiC member for heat treatment of semiconductor capable of reducing the contamination of the semiconductor wafer as much as possible and causing no slip is provided.This method comprises the first step of kneading a SiC powder having a total metal impurity quantity of 0.2 ppm or less with a molding assistant; the second step of forming a compact from the kneaded raw material; the third step of calcining the compact; the fourth step of purifying the calcined body; and the fifth step of impregnating the purified body with silicon within a sealed vessel provided in a heating furnace body.
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申请公布号 |
US6699401(B1) |
申请公布日期 |
2004.03.02 |
申请号 |
US20010958911 |
申请日期 |
2001.10.15 |
申请人 |
TOSHIBA CERAMICS CO., LTD. |
发明人 |
HORIUCHI YUSHI;KUROI SHIGEAKI |
分类号 |
C04B35/573;C04B41/50;C04B41/52;C04B41/85;C04B41/89;H01L21/673;(IPC1-7):B22P19/00;B44C1/22;C03C15/00;C03C25/68;C23F1/00 |
主分类号 |
C04B35/573 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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