METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to control a decrease of a characteristic due to increased contact resistance by prevent the area of a contact hole from being reduced. CONSTITUTION: A gate insulation layer(22), a polysilicon layer(23), a tungsten silicide layer(24) and an insulation layer are sequentially formed on a semiconductor substrate(20) having a predetermined underlying layer. The tungsten silicide layer and the insulation layer are selectively etched to form a part of a gate electrode pattern. Oxygen ions are implanted into the polysilicon layer through the insulation layer and the gate insulation layer. The polysilicon layer and the gate insulation layer are selectively etched to form a gate electrode. An ion implantation process is performed by using the gate electrode as an ion implantation preventing layer to form a low density impurity region. A nitride layer(27) is deposited on the resultant structure to form an oxide layer in the lower layer of the nitride layer except the nitride layer formed on the sidewall of the gate electrode in the deposition process of the nitride layer. An interlayer dielectric(29) is formed on the resultant structure. The interlayer dielectric is selectively etched to form a contact hole.