发明名称 |
Method for manufacturing a metal-insulator-metal capacitor |
摘要 |
A method of manufacturing a MIM capacitor having a bottom electrode is provided by forming a metal wire including copper on a substrate. After the metal wire is formed on the substrate, a dielectric film is formed on the metal wire. A top electrode film is formed on the dielectric film, and then the top electrode film is etched to form a top electrode. A hard metallic polymer formed during the etching of the top electrode film is removed using a mixture of an oxygen gas and a fluorocarbon based gas. The lifting of the thin films is effectively prevented, and the yield of the manufacturing process for manufacturing a MIM capacitor is increased. Additionally, the MIM capacitor has a uniform capacitance because the damage to the dielectric film is prevented, and the oxidation of the bottom electrode is also prevented.
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申请公布号 |
US6699749(B1) |
申请公布日期 |
2004.03.02 |
申请号 |
US20030429321 |
申请日期 |
2003.05.05 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
LEE SEUNG-GUN;KIM IL-GOO;CHANG HO-SEN;CHANG JU-HYUK;HAH SANG-ROK |
分类号 |
H01G4/08;H01G4/33;H01G13/00;H01G13/06;H01L21/02;H01L21/3065;H01L21/3213;H01L21/822;H01L21/8242;H01L27/04;(IPC1-7):H01L21/824 |
主分类号 |
H01G4/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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