发明名称 Method of manufacturing a semiconductor device
摘要 Salient electrodes on a semiconductor chip and leads on a film substrate are to be connected together with a high accuracy. A change in lead pitch which occurs at the time of connecting salient electrodes on a semiconductor chip and inner leads on a film substrate with each other is taken into account and a correction is made beforehand to the pitch of the inner leads. Likewise, a change in lead pitch which occurs at the time of connecting electrodes on a liquid crystal substrate and outer leads on the film substrate with each other is taken into account and a correction is made beforehand to the pitch of the outer leads.
申请公布号 US6699737(B2) 申请公布日期 2004.03.02
申请号 US20020242720 申请日期 2002.09.13
申请人 RENESAS TECH CORP;HITACHI ULSI SYS CO LTD 发明人 TOJO SHINJI;KANAMITSU SHINYA;ICHIHARA SEIICHI
分类号 H01L21/56;H01L21/60;H01L23/498;(IPC1-7):H01L21/44 主分类号 H01L21/56
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