METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to be capable of simplifying the forming process. CONSTITUTION: A mold insulating layer(107) and a hard mask(108) are sequentially formed at the upper portion of a semiconductor substrate(101). A plurality of holes(109a) are formed on the resultant structure by sequentially patterning the hard mask and the mold insulating layer. An storage node layer(110) is formed along the entire surface of the resultant structure. Then, a capping insulating layer(111) is formed at the upper portion of the storage node layer for completely filling the holes. A plurality of storage nodes and capping insulating patterns are formed at the inner portions of the holes by carrying out a planarization process on the resultant structure using a one-step CMP(Chemical Mechanical Polishing) process.