| 摘要 |
PURPOSE: To prevent defective of a bit line connected to a static memory cell caused by electromigration. CONSTITUTION: A first amplifier amplifies voltage of first local bit line connected to a static memory cell. A pre-charge circuit pre-charging a first global bit line connected to an output of a first amplifier supplies a pre-charge current respectively from both end parts of the first global bit line. Since a pre-charge current flows in the direction of the both of the global bit line, evaluation reference of electromigration can be more relaxed than that in the case of flowing of a current in the one direction, therefore, defective of the first global bit line caused by electromigration can be prevented. Since wiring width of the first global bit lines can be fine, a layout region can be minimized. Consequently, chip size of a semiconductor memory can be reduced and a chip cost can be reduced.
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