| 摘要 |
Recycling a donor wafer after having taken at least one useful layer of material chosen from semiconductor materials, comprises removal of substance on side of wafer where taking-off took place. Substance is removed by mechanical means so that, after removal, at least part of buffer structure remains, this part capable of being reused as buffer structure during subsequent useful layer taking-off. Recycling a donor wafer (10) after having taken at least one useful layer of a material chosen from semiconductor materials, the donor wafer comprising successively a substrate (1), a buffer structure and, before taking-off, a useful layer, comprises removal of substance on the side of the donor wafer where the taking-off took place. The removal of substance comprises employing mechanical means so that, after removal of substance, at least part of the buffer structure remains, this at least part of the buffer structure capable of being reused as a buffer structure during a subsequent useful layer taking-off. Independent claims are also included for the following: (a) production of a donor wafer intended to provide a useful layer by taking-off and capable of being recycled after taking-off, comprising: formation of a first part of a buffer structure on a substrate; formation of a protective layer on the first part of the buffer structure, in a material chosen from crystalline materials; formation on the protective layer of the second part of the buffer structure, such that it has a lattice parameter in the vicinity of the protective layer the same as that of the first part of the buffer structure in the vicinity of the protective layer; (b) taking off a useful layer on a donor wafer to be transferred to a receiving substrate, comprising: bonding the donor wafer to the receiving substrate; detaching a useful layer bonded to the receiving substrate from the donor wafer; and recycling the donor wafer complying with the method of recycling; (c) application of the method of cyclically taking-off for producing a structure comprising the receiving substrate and the useful layer, the useful layer comprising at least one of the following materials: silicon-germanium (SiGe), strained Si, Ge, an alloy belonging to the IU-V family, the composition of which is respectively chosen from the possible (aluminum, gallium, indium)-(nitrogen-phosphorus-arsenic) (Al,Ga,In)-(N,P,As) combinations; and (d) a donor wafer having supplied a useful layer by taking-off and capable of being recycled complying with the method of recycling, comprising a substrate and a remaining part of the buffer structure.
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