发明名称 MICROELECTRONIC PROCESS AND STRUCTURE
摘要 PURPOSE: A method is provided to be capable of easily integrating air as a dielectric layer in a semiconductor device. CONSTITUTION: A dielectric layer which is to be patterned to a substrate is coated on the substrate. The dielectric layer is patterned. A conductor metal is coated on the patterned dielectric layer and a common surface is formed from the conductor metal and the dielectric layer. An organic dielectric layer is formed on the resultant structure. The coated substrate contacts with a fluorine-containing compound in order to form an arrangement including air as dielectric between conductor structures and having a continuous dielectric layer on the top side.
申请公布号 KR20040017785(A) 申请公布日期 2004.02.27
申请号 KR20030057479 申请日期 2003.08.20
申请人 INFINEON TECHNOLOGIES AG. 发明人 SEZI RECAI
分类号 H01L21/302;H01L21/306;H01L21/311;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 主分类号 H01L21/302
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