发明名称 |
MICROELECTRONIC PROCESS AND STRUCTURE |
摘要 |
PURPOSE: A method is provided to be capable of easily integrating air as a dielectric layer in a semiconductor device. CONSTITUTION: A dielectric layer which is to be patterned to a substrate is coated on the substrate. The dielectric layer is patterned. A conductor metal is coated on the patterned dielectric layer and a common surface is formed from the conductor metal and the dielectric layer. An organic dielectric layer is formed on the resultant structure. The coated substrate contacts with a fluorine-containing compound in order to form an arrangement including air as dielectric between conductor structures and having a continuous dielectric layer on the top side.
|
申请公布号 |
KR20040017785(A) |
申请公布日期 |
2004.02.27 |
申请号 |
KR20030057479 |
申请日期 |
2003.08.20 |
申请人 |
INFINEON TECHNOLOGIES AG. |
发明人 |
SEZI RECAI |
分类号 |
H01L21/302;H01L21/306;H01L21/311;H01L21/312;H01L21/768;H01L23/522;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|