| 摘要 |
PURPOSE: A phase transition memory device structure and a manufacturing method thereof are provided to be capable of restraining leakage current. CONSTITUTION: A phase transition memory device structure is provided with a lower electrode(220a) electrically connected to an impurity diffusion region of a semiconductor substrate(100), a lower insulating layer(240) formed at the upper portion of the lower insulating layer, and a heater plug(280) for contacting the lower electrode through the lower insulating layer. The phase transition memory device structure further includes a buffer insulating layer pattern(300a) formed at the upper portion of the lower insulating layer, a phase transition material layer pattern(340a) formed at the upper portion of the buffer insulating layer pattern for being connected with the upper surface of the heater plug, and an upper electrode(400a) formed at the upper portion of the phase transition material layer.
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