| 摘要 |
FIELD: methods for laser cutting of anisotropic materials such as various monocrystals, for example, sapphire and quartz, as well as various semiconductor materials. SUBSTANCE: the method consists in application of a nick in the line of cutting, heating of the line of cutting by a laser beam at a relative displacement of the material and beam and local cooling of the area of heating with the aid of a refrigerant. Depending on the direction of cutting of the anisotropic material relative to the crystallographic orientation of the material, the value of the coefficient of linear thermal expansion is determined, and the intensity of heating in each direction of cutting is selected proportionally to the coefficient of linear thermal expansion due to variation of the speed of relative displacement of the laser beam and material and/or variation of the power and/or power density of laser radiation. The ratio of the speed of relative displacement of the laser beam and material and the power of laser radiation depending on variation of the coefficient of linear thermal expansion of the material is selected from the following condition: P.upsilon-1 = k.lambda-1, where P - the power of laser radiation, V-the speed of relative displacement of the laser beam and material, mm/s; lambda - - the coefficient of linear thermal expansion of the material, °C-1; k - the proportionality factor, J/mm C. EFFECT: enhanced quality of cutting of brittle non-metallic anisotropic materials due to accomplishment of cutting in different directions relative to the crystallographic orientation both in case of linear cutting in different directions, and at cutting in any curvilinear contour. 2 cl, 3 dwg
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