发明名称 THIN FILM MANUFACTURING METHOD AND THIN FILM MANUFACTURING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a thin film manufacturing method for forming an oxide film on the surface of a substrate without causing a thermal damage and a damage by particle collision to the substrate. SOLUTION: In the thin film manufacturing method, evaporated gas from a substance 41 to be oxidized and ozone O<SB>3</SB>or a gas containing ozone are supplied to the surface of the substrate 31, the evaporated gas from the substance 41 to be oxidized and oxygen configuring the ozone O<SB>3</SB>are chemically reacted to produce an oxide, and the oxide is deposited on the surface of the substrate 31 to form an oxide film 33. The thin film manufacturing apparatus 1 realizing this method is provided with a chamber 11; a substrate support 12 for supporting the substrate 31 and placed in the chamber 11; an oxidized substance supply section 13 containing the substance 41 to be oxidized and placed in the chamber 11; a heat source 14 for heating up the substance 41 to be oxidized; and an ozone supply section 15 for supplying ozone O<SB>3</SB>to the surface of the substrate 31 supported by the substrate support 12. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063607(A) 申请公布日期 2004.02.26
申请号 JP20020217507 申请日期 2002.07.26
申请人 SONY CORP 发明人 HELMUT BENISCH
分类号 C23C14/24;H01L21/31;H01L21/316;(IPC1-7):H01L21/316 主分类号 C23C14/24
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