发明名称 THIN FILM TRANSISTOR AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method which is capable of making amorphous silicon, silicon formed of fine crystals or polysilicon grow into a single crystal or silicon formed of crystals larger than usual through a laser annealing process. SOLUTION: When an amorphous silicon island to serve as an active region is melted and recrystallized as irradiated with a laser beam, the amorphous silicon island is accompanied with a peninsula composed of very fine lines which are quickly cooled down, so that nucleuses occur in the peninsula, and the silicon island to serve as the active region is turned into a single crystal. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063478(A) 申请公布日期 2004.02.26
申请号 JP20020145465 申请日期 2002.04.11
申请人 YO FUMIMASA 发明人 YO FUMIMASA
分类号 H01L21/20;H01L21/268;H01L21/336;H01L29/786;(IPC1-7):H01L29/786 主分类号 H01L21/20
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