发明名称 DRIVING METHOD FOR VOLTAGE DRIVING TYPE SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To suppress each voltage driving type semiconductor element from having a voltage imbalance for prevention of application of overvoltage to the device and having destruction due to the overvoltage application, by reducing tail current occurring in turning off each device, in a power converter formed by connecting the plurality of voltage driving type semiconductor elements in series. SOLUTION: An illustration shows a gate drive circuir of the voltage driving type semiconductor element, which permits an interface circuit IF to turn on a switch SW1 at turn-on, so that it is turned on through a register Rg(on). At turn-off, conventionally, a switch SW2 was turned on and gate-driven at -15V through a register Rg(off). On the other hand, this gate drive circuit turns on a switch SW3 and is turned off, for example, at -20V, thus reducing tail current and suppressing each device from having voltage imbalance. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004064822(A) 申请公布日期 2004.02.26
申请号 JP20020216379 申请日期 2002.07.25
申请人 FUJI ELECTRIC HOLDINGS CO LTD 发明人 MARUYAMA KOJI;SASAGAWA KIYOAKI
分类号 H02M1/00;H02M1/08;(IPC1-7):H02M1/00 主分类号 H02M1/00
代理机构 代理人
主权项
地址