发明名称 Reticle for creating resist-filled vias in a dual damascene process
摘要 An apparatus, system and method for fabricating a wafer utilizing a dual damascene process are described. A wafer-in-process, having conductive plugs within a first dielectric layer, a hard mask over the first dielectric layer, vias in a second dielectric layer which overlies the hard mask, and a photoresist material within the vias is further processed by a photolithographic device having transparent portions and radiant energy inhibiting portions. The photolithographic device is registered to the wafer-in-process to prevent radiant energy from being directly transmitted into the photoresist material overlaying the vias. This prevents the exposure of a portion of the photoresist material at a lower portion of the vias, thus protecting the hard mask layer and/or the conductive plugs from damage during a subsequent etching process. The exposed photoresist material is then removed.
申请公布号 US2004038539(A1) 申请公布日期 2004.02.26
申请号 US20030636525 申请日期 2003.08.08
申请人 HOLSCHER RICHARD D. 发明人 HOLSCHER RICHARD D.
分类号 G03B27/00;G03B27/72;G03C5/00;G03F9/00;G21K5/10;H01J37/08;H01L21/311;H01L21/4763;H01L21/768;H01L23/48;H01L23/52;H01L23/58;H01L29/40;(IPC1-7):H01L21/311 主分类号 G03B27/00
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