发明名称 |
METHOD FOR SELECTIVELY REMOVING MATERIAL FROM THE SURFACE OF A SUBSTRATE, MASKING MATERIAL FOR A WAFER AND WAFER PROVIDED WITH A MASKING MATERIAL |
摘要 |
The invention relates to a method for selectively removing material from the surface of a substrate in order to form a recess, comprising the following steps: applying a mask to the surface of the substrate in accordance with the desired selective removal, and; dry etching the substrate, whereby metal, preferably aluminum, is used as a masking material. Energy can be inductively injected into a plasma. |
申请公布号 |
WO2004017361(A2) |
申请公布日期 |
2004.02.26 |
申请号 |
WO2003EP09052 |
申请日期 |
2003.08.14 |
申请人 |
PERKINELMER OPTOELECTRONICS GMBH & CO. KG;HAUSNER, MARTIN |
发明人 |
HAUSNER, MARTIN |
分类号 |
B81C1/00;H01L21/3065;H01L21/308 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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