发明名称 METHOD FOR SELECTIVELY REMOVING MATERIAL FROM THE SURFACE OF A SUBSTRATE, MASKING MATERIAL FOR A WAFER AND WAFER PROVIDED WITH A MASKING MATERIAL
摘要 The invention relates to a method for selectively removing material from the surface of a substrate in order to form a recess, comprising the following steps: applying a mask to the surface of the substrate in accordance with the desired selective removal, and; dry etching the substrate, whereby metal, preferably aluminum, is used as a masking material. Energy can be inductively injected into a plasma.
申请公布号 WO2004017361(A2) 申请公布日期 2004.02.26
申请号 WO2003EP09052 申请日期 2003.08.14
申请人 PERKINELMER OPTOELECTRONICS GMBH & CO. KG;HAUSNER, MARTIN 发明人 HAUSNER, MARTIN
分类号 B81C1/00;H01L21/3065;H01L21/308 主分类号 B81C1/00
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