| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
<p>A method for manufacturing a semiconductor device having a step wherein a metal carbide film (23) for preventing diffusion of metal is formed at the interface between an organic interlayer dielectric film (22) and a metal film (24) by forming the metal film (24) on the organic interlayer dielectric film (22) which is provided on a semiconductor substrate, and a step wherein the metal carbide film (23) is left on the organic interlayer dielectric film (22) by selectively removing the metal film (24) from the metal carbide film (23).</p> |
| 申请公布号 |
WO2004017402(A1) |
申请公布日期 |
2004.02.26 |
| 申请号 |
WO2003JP09424 |
申请日期 |
2003.07.24 |
| 申请人 |
FUJITSU LIMITED;KIMURA, TAKAHIRO;UCHIBORI, CHIHIRO |
发明人 |
KIMURA, TAKAHIRO;UCHIBORI, CHIHIRO |
| 分类号 |
H01L21/4763;H01L21/768;(IPC1-7):H01L21/768 |
主分类号 |
H01L21/4763 |
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