CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A method for fabricating a contact structure of a semiconductor device is provided to prevent conductive layers adjacent to a cobalt silicide layer formed for an ohmic contact from being short-circuited by forming a spacer on the inner sidewall of a contact hole passing through an interlayer dielectric. CONSTITUTION: The interlayer dielectric(20) is formed on a substrate(2) with a conductive region. The contact hole is formed which passes through the interlayer dielectric and exposes the conductive region. The spacer(24) is formed on the inner sidewall of the contact hole. The cobalt silicide layer(30) is formed on the bottom surface of the contact hole having the spacer on its inner sidewall. A conductive layer(38) for filling the contact hole is formed on the cobalt silicide layer.