发明名称 WAFER-BONDING APPARATUS AND WAFER-BONDING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a wafer-bonding apparatus and a method applicable, even when the planarity or nanotopography is regarded important. <P>SOLUTION: The wafer-bonding apparatus is provided with a stamper 10 for pressing a wafer W, which is placed on a carrier plate 5 via adhesives S under an atmospheric pressure and a pressure reduced chamber for reducing the pressure of the wafer W, which is located on the carrier plate 5 via the adhesives S without load. When keeping the planarity of the wafer high, the wafer is pressed over a long time at a comparatively low pressing speed, while heating the carrier plate 5 to a first temperature. When keeping the nanotopography of the wafer high, the wafer is pressed in a short time at a comparatively high press speed while heating the carrier plate 5 to a second temperature which is higher than the first temperature and further, its pressure is reduced in the pressure reduced chamber under no load. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063880(A) 申请公布日期 2004.02.26
申请号 JP20020221435 申请日期 2002.07.30
申请人 KOMATSU ELECTRONIC METALS CO LTD 发明人 AZUMA JIYUNICHIROU;MIZOWAKI KOJI;YAMASHITA KENJI
分类号 B24B37/30;H01L21/304 主分类号 B24B37/30
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