| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique of reducing micro-scratches on the polished surface in a CMP process, without losing the uniform machining capability of the polishing agent within the surface of a wafer. <P>SOLUTION: A plurality of discs or ring-shaped polishing pads 2a, 2b, 2c are disposed concentrically on a platen 1 around its revolution axis with predetermined spacing. The diameter of the round polishing pad 2a and the widths of the ring-shaped polishing pads 2b, 2c are made smaller than the diameter of the semiconductor wafer 3, and their surfaces are subjected to perforation machining. <P>COPYRIGHT: (C)2004,JPO |
