| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that is provided with a damascene structure using Cu in a wiring material and can suppress cracks at dicing and infiltration of water etc. SOLUTION: After a contact pattern 161 is formed on a semiconductor substrate 101, a first wiring pattern composed of a first barrier metal film 181 and a first wiring pattern consisting of a first conductor pattern 171 is formed on the pattern 161, so that the outer peripheral portion of the barrier metal film 181 covering the outer peripheral side wall surface of the conductor pattern 171 may form a moisture-resistant ring provided with such a structure that comes into contact with the bottom face section of the barrier metal film 182 covering the bottom face of a via hole contact section 201 in its upper end section. Consequently, when the barrier metal film 181 using Ta, TiN, etc., is formed without break over a wide extent from the semiconductor substrate 101 to the uppermost silicon oxide film 124, the adhesive property of the film 181 can be improved and the occurrence of cracks and the infiltration of water can be suppressed. COPYRIGHT: (C)2004,JPO |
