| 摘要 |
PROBLEM TO BE SOLVED: To provide a nuclear spin manipulating method using two-dimensional electron gas and a nuclear spin manipulation device using the same, by which solid nuclear spin polarization can be controlled efficiently and that at a spcific optional and specific point be also controlled. SOLUTION: This device is provided with a semiconductor layer 5, that has a thickness enough for forming a two-dimensional electron gas, barrier semiconductor layers 4 and 6 that are joined at hetero-joint on the upper and lower surfaces of the semiconductor layer 5 to form a potential barrier, and a magnetic field generator to apply a magnetic field (B) to the semiconductor layer 5 in the direction of the layer thickness. The electron density and intensity of the magnetic field are controlled to keep the state of quantum Hall effect, where different spin states coexist at the same energy level, and the voltage to be applied to the potential barrier is controlled to control the symmetry of confining potential of the two-dimensional electron, thus operating the nuclear spin of elements constituting the semiconductor layer 5. When the confining potential is symmetrical, nuclear spin polarization is generated; and when it is not symmetrical, the nuclear spin polarization is suppressed. COPYRIGHT: (C)2004,JPO |
